Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Reexamination Certificate
2007-03-13
2007-03-13
Everhart, Caridad (Department: 2891)
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
C257SE21010, C257SE21008, C438S652000
Reexamination Certificate
active
10980658
ABSTRACT:
A method of forming a metal cap over a conductive interconnect in a chalcogenide-based memory device is provided and includes, forming a layer of a first conductive material over a substrate, depositing an insulating layer over the first conductive material and the substrate, forming an opening in the insulating layer to expose at least a portion of the first conductive material, depositing a second conductive material over the insulating layer and within the opening, removing portions of the second conductive material to form a conductive area within the opening, recessing the conductive area within the opening to a level below an upper surface of the insulating layer, forming a cap of a third conductive material over the recessed conductive area within the opening, the third conductive material selected from the group consisting of cobalt, silver, gold, copper, nickel, palladium, platinum, and alloys thereof, depositing a stack of a chalcogenide based memory cell material over the cap, and depositing a conductive material over the chalcogenide stack.
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Elkins Patricia C.
Klein Rita J.
Moore John T.
Dinsmore & Shohl LLP
Everhart Caridad
Micro)n Technology, Inc.
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