Electroless plating bath used for forming a wiring of a semicond

Details Electroless plating bath used for forming a wiring of a semicond Electroless plating bath used for forming a wiring of a semicond

1995-07-13

1997-07-08

Klemanski, Helene

Compositions: coating or plastic

Coating or plastic compositions

Metal-depositing composition or substrate-sensitizing...

106 124, 106 126, 106 128, C23C 1831, C23C 1840, C23C 1844

Patent

active

056456280

ABSTRACT:
A contact hole and a wiring groove are formed in an insulating layer formed on a semiconductor substrate. A silver layer is formed inside of the contact hole and the wiring groove and on the insulating layer with the use of an electroless plating bath comprising: silver nitrate containing silver ions; tartaric acid serving as a reducing agent of the silver ions; ethylenediamine serving as a complexing agent of the silver ions; and metallic ions of tetramethylammoniumhydroxide serving as a pH control agent. Then, the silver layer on the insulating layer is removed by a chemical and mechanical polishing method such that an embedded wiring is formed in each of the contact hole and the wiring groove.

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Metal Finishing Abstracts, vol. 25, No. 4, Jul. 1983, GB p. 201 Mitrofanov electroless cu plating solution of increased stability and giving increased deposition rate.
N. Koura, "Electroless Plating Of Silver", Electroless Plating Fundamentals & Applications, 1985, Chapter 17, pp. 441-462 (no month avail.).

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