Semiconductor device manufacturing: process – Making passive device
Patent
1997-10-06
2000-02-29
Monin, Jr., Donald L.
Semiconductor device manufacturing: process
Making passive device
438678, 438686, 257295, 257531, H01L 2144
Patent
active
06030877&
ABSTRACT:
The present invention provides a method of manufacturing an inductor element 46 using an electroless Au plating solution. The invention has three embodiments for forming the inductor. In the first embodiment, a first insulating layer 30 is formed over a semiconductor structure 10 20. An adhesion layer 34 composed of polysilicon is formed over the first insulating layer 30. A first barrier layer 36 comprised of Ni is selectively formed using an Ni electroless plating process over the adhesion layer 34. In an important step, a gold layer 40 is electroless plated over the first barrier layer 36 using an Au electroless plating process. A second barrier layer 44 is formed over the gold layer 40 using an electroless Ni deposition technique. A planarization layer is formed over the second barrier layer. A novel core metal layer composed of a Fe--Co alloy is electroless plated over the planarization layer. The second and third embodiments vary in the process of defining the gold electroless inductor by forming the inductor in a trench. The gold electroless inductor 46 can withstand high current densities without suffering from electromigration effects and is highly corrosion resistant.
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Huang Tzuen-Hsi
Lee Chwan-Ying
Ackerman Stephen B.
Dietrich Michael
Industrial Technology Research Institute
Monin, Jr. Donald L.
Saile George O.
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