Electroding of multi-layered epitaxial structures

Chemistry: electrical and wave energy – Processes and products

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C25D 502

Patent

active

044486456

ABSTRACT:
To locate the very thin transparent low-resistivity planar electrode layers in a multilayer epitaxial structure for an electrooptic tunable filter, one edge of the stack is covered with a dielectric, and a long diagonal strip opening is made through the dielectric. A common metal electrode is formed on the opposite edge of the stack. The edge with the strip opening is immersed in a plating solution and potential applied at the common electrode so that a metal deposit is formed at the exposed location of each low-resistivity layer along the strip opening.

REFERENCES:
patent: 3400210 (1968-09-01), Reimer
patent: 3560351 (1971-02-01), Abbott
patent: 4088546 (1978-05-01), Wu

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