Electrodes for plasma etching apparatus and plasma etching appar

Details Electrodes for plasma etching apparatus and plasma etching appar Electrodes for plasma etching apparatus and plasma etching appar

1993-02-19

1995-09-05

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

118723E, 118728, 20429831, 216 67, H01L 2100

Patent

active

054475953

ABSTRACT:
A bottom electrode is of a double-layered structure composed of an aluminum portion and an anode oxide film. A surface of the aluminum portion is finished to a surface roughness of 1 .mu.m or less by polishing, for example, and the anode oxide film is grown by the anode oxidation technique. A surface of the anode oxide film is finished to a surface roughness of 1 .mu.m or less by polishing, for example. The polishing may be carried out by wrapping technique using diamond abrasive. The substrate slightly charged with descending cathode of plasma is weakly absorbed onto the bottom electrode, because the insulating film having a high degree of surface smoothness is interposed between the substrate and the bottom electrode. A large contact area and improved heat transfer are assured even with weak electrostatic absorption, thanks to excellent smoothness of the surface of the electrode. It is possible to control the temperature of the substrate without complicated mechanism.

REFERENCES:
patent: 4793975 (1988-12-01), Drage
patent: 4832781 (1989-05-01), Mears
patent: 4873942 (1989-10-01), Engle
patent: 4897171 (1990-01-01), Ohmi
patent: 5085750 (1992-02-01), Soraoka et al.

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