Electrodeposition of polycrystalline silicon from a molten fluor

Details Electrodeposition of polycrystalline silicon from a molten fluor Electrodeposition of polycrystalline silicon from a molten fluor

1977-05-12

1979-03-06

Kaplan, G. L.

Chemistry: electrical and wave energy

Processes and products

204DIG9, 428450, 428913, C25D 366, C25D 908, B32B 1504

Patent

active

041429478

ABSTRACT:
A method for electrodeposition of polycrystalline silicon from a molten fluoride bath onto a metal cathode which is essentially non-alloying with silicon (e.g., silver, tungsten, niobium). The silicon is deposited as a continuous coherent, firmly-retained, non-spongy layer of large columnar grains on the substrate.

REFERENCES:
patent: RE25630 (1964-08-01), Cook
patent: 2982763 (1959-06-01), Stern et al.
patent: 3022233 (1962-02-01), Olstowski
patent: 3219561 (1965-11-01), Monnier et al.
patent: 3254010 (1966-05-01), Monnier et al.
patent: 3983012 (1976-09-01), Cohen
John H. Lamneck, Jr. et al., 9th IEEE Photovoltaic Specialists Conf., pp. 193-195, May. 1972.

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