Chemistry: electrical and wave energy – Apparatus – Electrolytic
Patent
1994-10-19
1998-03-03
Gorgos, Kathryn
Chemistry: electrical and wave energy
Apparatus
Electrolytic
204297R, C25D 366
Patent
active
057230285
ABSTRACT:
An electrochemical etching step in a semiconductor device fabrication process increases the radius of curvature of edges of metal lines deposited on the semiconductor device. The metal lines are fabricated by forming a mask, electrodepositing the metal, and removing the mask, and the electrochemical etching step in performed subsequently. The increased radius of curvature of the metal lines simplifies subsequent planarization and decreases line-to-line capacitance, thereby enhancing device performance. In an apparatus for performing the fabrication process, wires sown into a gasket which secures the semiconductor wafer and prevents electrolyte leakage, allows the gasket to function also as a component of the cathode. A more uniform metal deposition is created by a virtual anode, i.e., a metal plate having an aperture and being located between the anode and the cathode.
REFERENCES:
Perakh, M., "Slot-Type Field-Shaping Cell: Theory, Experiment And Application"; Surface Coating Technology, 31 (1987), pp. 409-426.
Gorgos Kathryn
Mayekar Kishor
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