Electrodeposition

Details Electrodeposition Electrodeposition

1975-10-16

1977-05-17

Tufariello, T. M.

Chemistry: electrical and wave energy

Processes and products

204 29, 427 43, C25D 502, C25D 554

Patent

active

040240290

ABSTRACT:
The invention concerns a method of electrodeposition onto a semiconductor. The surface lattice structure of the semiconductor is first disturbed, by an ion beam or otherwise, and then the semiconductor is immersed in an electroplating solution. When the semiconductor is irradiated with light of sufficiently short wavelength to generate free charge carriers therein, ions from the solution are deposited on the semiconductor surface. Metal ions are deposited by this technique only on the disturbed regions of the semiconductor surface, providing an excellent selective deposition process. Multiple layers may be deposited, and even different metals on different regions of the semiconductor surface. The method is particularly suited to the production of solid slate devices such as, for example, gallium arsenide field effect transistors.

REFERENCES:
patent: 3294583 (1966-12-01), Fedows-Fedotowsky
patent: 3458368 (1969-07-01), Haberecht
patent: 3501342 (1970-03-01), Haberecht et al.
patent: 3506545 (1970-04-01), Garwin et al.
patent: 3516855 (1970-06-01), Goll et al.
patent: 3529961 (1970-09-01), Schaefer et al.
patent: 3551213 (1970-12-01), Boyle
American IEE Transactions on Microwave Theory and Techniques, vol. MTT22, No. 5, May 1974, pp. 510-517.
Mead, Metal-Semiconductor Surface Barriers, Solid State Electronics, vol. 9, pp. 1023-1033.
Formation of Electrical Contacts on Insulating and Semiconducting Diamonds, by A. T. Collins et al., Wheatstone Physics Lab., King's College, London.
Optical Phonon Effects in Absorption and Photoconductivity of Semiconducting Diamond, by J. R. Hardy et al., J. J. Thomson Physical Lab., Univ. of Reading, Reading, Berks, England.

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