Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2006-09-05
2006-09-05
Prenty, Mark V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C257S059000, C257S072000, C257S347000, C257S387000
Reexamination Certificate
active
07102155
ABSTRACT:
In the present invention, a lower electrode is utilized as a photomask to form a liquid-repellent region having a generally same pattern shape as that of the lower electrode and a liquid-attracting region having a generally reversed pattern shape on an insulating film. A conductive ink is coated and calcined in the liquid-attracting region to form an upper electrode having a generally reversed pattern shape to the lower electrode in a self-aligned manner, eliminating the occurrence of misregistration even when a printing method is used. Consequently, semiconductor devices such as an active matrix thin film transistor substrate can be formed using a printing method.
REFERENCES:
patent: 6828582 (2004-12-01), Ando et al.
patent: 2004/0129978 (2004-07-01), Hirai
patent: 08-264793 (1996-10-01), None
patent: 2003-209339 (2003-07-01), None
patent: 2003-209340 (2003-07-01), None
Nikkei Electronics, Jun. 17, 2002, pp. 67-78.
Adachi Masaya
Ando Masahiko
Sasaki Hiroshi
Wakagi Masatoshi
Hogan & Hartson LLP
Prenty Mark V.
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