Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2008-07-01
2008-07-01
Smith, Zandra (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C257S059000, C257S072000, C257S347000, C257S387000
Reexamination Certificate
active
07394095
ABSTRACT:
In the present invention, a lower electrode is utilized as a photomask to form a liquid-repellent region having a generally same pattern shape as that of the lower electrode and a liquid-attracting region having a generally reversed pattern shape on an insulating film. A conductive ink is coated and calcined in the liquid-attracting region to form an upper electrode having a generally reversed pattern shape to the lower electrode in a self-aligned manner, eliminating the occurrence of misregistration even when a printing method is used. Consequently, semiconductor devices such as an active matrix thin film transistor substrate can be formed using a printing method.
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patent: 2004/0129978 (2004-07-01), Hirai
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Adachi Masaya
Ando Masahiko
Sasaki Hiroshi
Wakagi Masatoshi
Green Telly D
Hitachi , Ltd.
Hogan & Hartson LLP
Smith Zandra
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