Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2005-02-08
2005-02-08
Nhu, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S414000
Reexamination Certificate
active
06853001
ABSTRACT:
An electrode substrate of a PDP has an electrode pattern on a glass substrate and is made by baking and removing a resin binder in a conductive pattern composed of a conductive ink. The conductive pattern is formed by printing the conductive ink on the glass substrate by an intaglio offset printing method. The conductive ink is formed by dispersing or dissolving a metal powder and a resin binder into a solvent. A printing blanket used for printing the conductive pattern has a rubber layer on the surface of the printing blanket, and the rubber layer poses a volume increasing rate under 20% when the rubber is immersed in the solvent for 24 hours at 23° C. The printing blanket is heated such that a surface temperature TBof the printing blanket is about 40˜200° C., and then the printing blanket is cooled in a condition that the surface temperature TB(° C.) of the printing blanket with respect to a surface temperature TP(° C.) of the intaglio satisfies the equation |TP−TB|≦5° C. As a result, the electrode substrate has a tiny and highly precise electrode pattern.
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Kondo Yasuhiko
Sugiya Makoto
J.C. Patents
Nhu David
Sumitomo Rubber Industries Ltd.
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