Electrode substrate having double layers of indium tin oxide and

Details Electrode substrate having double layers of indium tin oxide and Electrode substrate having double layers of indium tin oxide and

1994-07-28

1996-04-09

Gross, Anita Pellman

Optical: systems and elements

Holographic system or element

Using a hologram as an optical element

359 79, 359 74, G02F 11343, G02F 11333

Patent

active

055067077

ABSTRACT:
An electrode substrate for display devices comprises a builtup structure having a resin layer 1, an underlying layer 2 and a pattern of a conductive layer superposed in this order. The underlying layer consists of a SiO.sub.2 film 8 formed by sputtering. The conductive layer 3 consists of a double-layer structure including a first ITO film 9 formed by low temperature sputtering and a second ITO film 10 formed by high temperature sputtering. The SiO.sub.2 film has an internal stress close to zero. The first ITO film 9 has an internal stress in tension and the second ITO film has an internal stress in compression counterbalancing the internal stress in tension therewith. Thus, the builtup structure permits the internal stresses involved in the substrate to be relaxed.

REFERENCES:
patent: 4853296 (1989-08-01), Fukuyoshl
patent: 5212575 (1993-05-01), Kojima
patent: 5289300 (1994-02-01), Yamazaki
patent: 5329390 (1994-07-01), Fujiwara

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