Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2005-05-17
2005-05-17
Kang, Donghee (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S091000, C257S094000, C257S099000, C257S743000, C257S745000, C257S748000, C438S046000, C438S047000, C438S604000, C438S606000
Reexamination Certificate
active
06894391
ABSTRACT:
An electrode structure on a p-type III group nitride semiconductor layer includes first, second and third electrode layers successively stacked on the semiconductor layer. The first electrode layer includes at least one selected from a first metal group of Ti, Hf, Zr, V, Nb, Ta, Cr, W and Sc. The second electrode layer includes at least one selected from a second metal group of Ni, Pd and Co. The third electrode layer includes Au.
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Kang Donghee
Morrison & Foerster / LLP
Sharp Kabushiki Kaisha
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