Electrode structure of capacitor for semiconductor memory device

Details Electrode structure of capacitor for semiconductor memory device Electrode structure of capacitor for semiconductor memory device

1996-11-26

1999-09-21

Kincaid, Kristine

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

361311, 361305, 3613214, H01G 4005, H01G 406

Patent

active

059562242

ABSTRACT:
An electrode structure and fabrication method for a capacitor for a semiconductor memory device which have been improved suitably for the formation of a high dielectric thin film, which method includes forming an interlayer insulation film on a substrate having a transistor formed therein, forming an electrode material on the interlayer insulation layer, forming a resist on the electrode material for patterning the electrode material, forming a lower electrode each surface of which has the same slope with respect to the substrate by performing an isotropic etching on the electrode material having the resist pattern thereon and the resist, forming a dielectric film on the lower electrode to have a regular thickness, and forming an upper electrode on the dielectric film to have a regular thickness.

REFERENCES:
patent: 4646118 (1987-02-01), Takemae
patent: 4930044 (1990-05-01), Eda et al.
patent: 5088002 (1992-02-01), Ogawa
patent: 5335138 (1994-08-01), Sandhu et al.

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