Electrode structure of a semiconductor device which uses a coppe

Details Electrode structure of a semiconductor device which uses a coppe Electrode structure of a semiconductor device which uses a coppe

1993-03-24

1994-03-08

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

With means to prevent contact from penetrating shallow pn...

257635, 257747, 257750, 257762, 257780, H01L 2348

Patent

active

052930734

ABSTRACT:
A semiconductor device comprises a semiconductor substrate, a first insulation film formed on the semiconductor substrate, a metal film for forming a bonding pad on the first insulation film, and a second insulation film which is formed between the first insulation film and the bonding pad and which is stiffer than the first insulation film.

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