Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Bump leads
Reexamination Certificate
2008-08-25
2010-11-02
Clark, Jasmine J (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Bump leads
C257S737000, C257SE23021, C257SE23069
Reexamination Certificate
active
07825513
ABSTRACT:
A first insulation film having a first opening is provided on an electrode pad of a semiconductor chip. A second insulation film having a second opening is provided on the first insulation film. A ground metallic layer which is to be in contact with the electrode pad via the first opening is provided on the first insulation film. A bump which is to be mechanically and electrically connected to the ground metallic layer is provided. Further, the above placement is made in a way that the ground metallic layer is provided in the second opening, and the ground metallic layer is provided on an inner side than an outer periphery of the electrode pad, covering the first opening.
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Clark Jasmine J
McDermott Will & Emery LLP
Panasonic Corporation
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