Electrode structure for III-V compound semiconductor element and

Details Electrode structure for III-V compound semiconductor element and Electrode structure for III-V compound semiconductor element and

1990-03-08

1991-09-10

Laroche, Eugene R.

357 67, H01L 2348

Patent

active

050478320

ABSTRACT:
This invention relates to an electrode structure formed on a p-type III-V compound semiconductor and a method of forming the same. An electrode can by easily formed with a low ohmic contact resistance and formed without degrading a semiconductor element. The electrode structure includes an Au alloy layer formed on a p-type III-V compound semiconductor, a Ti or Cr stopper layer formed on the Au alloy layer, and an Au layer formed on the stopper layer.

REFERENCES:
patent: 4617192 (1986-10-01), Chin et al.
E. Kaminska, A. Piotrowska, A. Barcz, J. Adamczewska and A. Turos, "Interaction of Au/Zn/Au Sandwich Contact Layers with A.sup.III B.sup.V Compund Semiconductors", Solid-State Electronics, vol. 29, No. 3, pp. 279-286, 1986.
8030 Electronics Letters, vol. 18 (1982), May, No. 11, London, Great-Britain (pp. 453 and 454).

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