Electrode structure for a semiconductor device

Details Electrode structure for a semiconductor device Electrode structure for a semiconductor device

1997-06-25

1999-10-26

Hardy, David B.

Active solid-state devices (e.g., transistors, solid-state diode

With titanium nitride portion or region

257751, H01L 2912

Patent

active

059734086

ABSTRACT:
An electrode structure for a semiconductor device is formed on the semiconductor device, consisting of silicon formed on a substrate to detect a physical quantity of the substrate and converting it into an electric signal, and transfers the converted electric signal to the outside. The electrode structure for the semiconductor device has a barrier layer consisting of a high-melting metal nitride and formed on a contact area of the semiconductor device and an electrode wiring formed on the barrier layer. The barrier layer has different composition ratios of the high-melting metal nitride in correspondence to each stage in the thickness of the barrier layer, in which the composition ratios are a composition ratio making a powerful bond performance at a bonding border area with the electrode wiring, and a composition ratio in which a metal element of the electrode wiring does not diffuse into the semiconductor in the barrier layer.

REFERENCES:
patent: 4782380 (1988-11-01), Shankar et al.
patent: 5202579 (1993-04-01), Fujii et al.
patent: 5242860 (1993-09-01), Nulman et al.
patent: 5360996 (1994-11-01), Nulman et al.
patent: 5475267 (1995-12-01), Ishii et al.
patent: 5561326 (1996-10-01), Ito et al.
patent: 5565708 (1996-10-01), Ohsaki et al.
patent: 5589712 (1996-12-01), Kawashima et al.
patent: 5641985 (1997-06-01), Tamura et al.
patent: 5675186 (1997-10-01), Shen et al.

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