Electrode structure and method for fabricating the same

Details Electrode structure and method for fabricating the same Electrode structure and method for fabricating the same

2005-04-12

2005-04-12

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S760000, C257S764000, C257S770000, C257S753000, C257S752000, C438S627000, C438S647000, C438S628000, C438S644000

Reexamination Certificate

active

06879043

ABSTRACT:
The electrode structure of this invention includes a silicon-containing film containing silicon as a principal constituent; a barrier metal layer of titanium nitride rich in titanium as compared with a stoichiometric ratio formed on the silicon-containing film; and a metal film with a high melting point formed on the barrier metal layer.

REFERENCES:
patent: 5561326 (1996-10-01), Ito et al.
patent: 5747361 (1998-05-01), Ouellet
patent: 5759916 (1998-06-01), Hsu et al.
patent: 5973408 (1999-10-01), Nagasaka et al.
patent: 6215186 (2001-04-01), Konecni et al.
patent: 6218256 (2001-04-01), Agarwal
patent: 6271573 (2001-08-01), Suguro
patent: 6346467 (2002-02-01), Chang et al.
patent: 6368900 (2002-04-01), Kenkaraseril
patent: 6413858 (2002-07-01), Chopra
patent: 6465828 (2002-10-01), Agarwal
patent: 60-153121 (1985-08-01), None
patent: 63-259075 (1988-10-01), None
patent: 63-272049 (1988-11-01), None
patent: 05-152250 (1993-06-01), None
patent: 07-094449 (1995-04-01), None
patent: 07-094731 (1995-04-01), None
patent: 08-186086 (1996-07-01), None
patent: 10-012869 (1998-01-01), None
patent: 11-068095 (1999-03-01), None
patent: 11-163325 (1999-06-01), None
patent: 11-261059 (1999-09-01), None
Takuo Sugano, “Super-speed MOS Device”, pp. 155, line 14-21, Published Dec. 15, 1986, Partial English Translation.

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