Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2006-05-23
2006-05-23
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C257S079000, C257S100000, C257S103000, C257S080000, C438S039000, C438S024000, C438S082000, C438S092000
Reexamination Certificate
active
07049630
ABSTRACT:
An OLED device having pillars with a cross section that is wider on the top. The pillars structure a conductive layer during deposition into distinct portions located between the pillars and on the top of the pillars. In one embodiment, the grooves between the pillars extend outside the electrode region to prevent shorting of adjacent electrodes.
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Ewald Guenther, U.S. Appl. No. 10/363,200, filed Jul. 16, 2003, 45pp.
Fritz Bernd
Klausmann Hagen
Lim Hooi Bin
Erdem Fazli
Fish & Richardson P.C.
Flynn Nathan J.
Osram Opto Semiconductors (Malaysia) Sdn. Bhd
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