Electrode of n-type nitridide semiconductor, semiconductor devic

Details Electrode of n-type nitridide semiconductor, semiconductor devic Electrode of n-type nitridide semiconductor, semiconductor devic

1998-07-10

2000-10-10

Hardy, David

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With housing or contact structure

257754, H01L 2943

Patent

active

061304468

ABSTRACT:
The present invention provides an electrode making good ohmic contact with an n-type nitride semiconductor without requiring heat treatment at high temperature, wherein an aluminum layer, a silicon layer, a nickel layer and a gold layer are laminated in this order on an n-type gallium nitride based semiconductor, to form an n-type electrode.

REFERENCES:
patent: 5061985 (1991-10-01), Meguro et al.
patent: 5760423 (1998-06-01), Kamakura et al.
Abstract of Japanese Patent Publ. No. 07094782; dated Apr. 7, 1995.
Abstract of Japanese Patent Publ. No. 07254733; dated Oct. 3, 1995.
"Investigation of the Mechanism for Ohmic Contact Formation in Al and Ti/Al Contacts to n-type GaN", Appl. Phys. Lett. 70(1), Jan. 6, 1997, pp. 57-59.

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