Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2008-01-08
2009-11-10
Quach, Tuan N. (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S768000, C257S771000, C257SE21172, C257SE29145, C438S605000, C438S656000, C438S688000
Reexamination Certificate
active
07615868
ABSTRACT:
There is provided a technology for obtaining an electrode having a low contact resistance and less surface roughness. There is provided an electrode comprising a semiconductor film101, and a first metal layer102and a second metal layer103sequentially stacked in this order on the semiconductor film101, characterized in that the first metal film102is formed of Al, and the second metal film103is formed of at least one metal selected from the group consisting of Nb, W, Fe, Hf, Re, Ta and Zr.
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Ando Yuji
Inoue Takashi
Kuzuhara Masaaki
Miyamoto Hironobu
Nakayama Tatsuo
Foley & Lardner LLP
NEC Corporation
Quach Tuan N.
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