Electrode, method for producing same and semiconductor...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

Reexamination Certificate

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C257S768000, C257S771000, C257SE21172, C257SE29145, C438S605000, C438S656000, C438S688000

Reexamination Certificate

active

07615868

ABSTRACT:
There is provided a technology for obtaining an electrode having a low contact resistance and less surface roughness. There is provided an electrode comprising a semiconductor film101, and a first metal layer102and a second metal layer103sequentially stacked in this order on the semiconductor film101, characterized in that the first metal film102is formed of Al, and the second metal film103is formed of at least one metal selected from the group consisting of Nb, W, Fe, Hf, Re, Ta and Zr.

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Kumar et al., “Thermally-Stable Low-Resistance Ti/Al/Mo/Au Multilayer Ohmic Contacts onn-CaN,” Journal of Applied Physics, vol. 92, No. 3, Aug. 1, 2002, pp. 1712-1714.
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