Electrode, method for producing same and semiconductor...

Details Electrode, method for producing same and semiconductor... Electrode, method for producing same and semiconductor...

2008-01-29

2008-01-29

Quach, T. N. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S768000, C257SE23159, C257SE21161, C438S656000, C438S660000

Reexamination Certificate

active

10574933

ABSTRACT:
There is provided a technology for obtaining an electrode having a low contact resistance and less surface roughness. There is provided an electrode comprising a semiconductor film101, and a first metal layer102and a second metal layer103sequentially stacked in this order on the semiconductor film101, characterized in that the first metal film102is formed of Al, and the second metal film103is formed of at least one metal selected from the group consisting of Nb, W, Fe, Hf, Re, Ta and Zr.

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