Electrode material and semiconductor element

Details Electrode material and semiconductor element Electrode material and semiconductor element

2008-04-08

2008-04-08

Wilczewski, M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular semiconductor material

C257S079000, C257S086000

Reexamination Certificate

active

10516377

ABSTRACT:
As a p-type ohmic contact electrode formation technique in a Group II-VI compound semiconductor, there is provided a material for forming an electrode that is low in resistance, stable, and not toxic, and is excellent in productivity, thereby providing an excellent semiconductor element. A semiconductor electrode material in the form of a material represented by a composition formula AxByCz where A: at least one element selected from Group 1B metal elements, B: at least one element selected from Group 8 metal elements, C: at least one element selected from S and Se), where X, Y, and Z are such that X+Y+Z=1, 0.20˜X˜0.35, 0.17˜Y˜0.30, and 0.45˜Z˜0.55.

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