Electrode material and semiconductor element

Details Electrode material and semiconductor element Electrode material and semiconductor element

2008-04-08

2008-04-08

Wilczewski, M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular semiconductor material

C257S079000, C257S086000

Reexamination Certificate

active

07355213

ABSTRACT:
As a p-type ohmic contact electrode formation technique in a Group II-VI compound semiconductor, there is provided a material for forming an electrode that is low in resistance, stable, and not toxic, and is excellent in productivity, thereby providing an excellent semiconductor element. A semiconductor electrode material in the form of a material represented by a composition formula AxByCz where A: at least one element selected from Group 1B metal elements, B: at least one element selected from Group 8 metal elements, C: at least one element selected from S and Se), where X, Y, and Z are such that X+Y+Z=1, 0.20˜X˜0.35, 0.17˜Y˜0.30, and 0.45˜Z˜0.55.

REFERENCES:
patent: 6670649 (2003-12-01), Yi et al.
patent: 59-18877 (1984-05-01), None
patent: 360260427 (1985-12-01), None
patent: 07-29924 (1995-01-01), None
patent: 07-221348 (1995-08-01), None
patent: 08-023112 (1996-01-01), None
patent: 2000-091598 (2000-03-01), None
Grima-Gallardo et al., “A Comparative Study of (Cu-III-Se2)x-(FeSe)1− Alloys (III: Al, Ga, In) (0 ≦ × ≦!) by X-Ray Diffraction, Differential Thermal Analysis and Scanning Electron Microscopy” Phys. Stat. Sol., 187, No. 2, 395-405, Wiley 2001.
International Search Report (Publication No. WO 2004/097849), Dated Aug. 17, 2004.
Katayama et al., “ZnSe-based with LEDs”, Journal of Crystal Growth, vol. 214/215, pp. 1064-1070, (2000).
Ishibashi, et al., “Advances in blue laser diodes”, Journal of Crystal Growth, vol. 138, pp. 677-685, (1994).
Fan, et al., “Graded band gap ohmic contact to p-ZnSe”, Appl. Phys. Lett., vol. 61, pp. 3160-3162, (Dec. 1992).
M. Konagai, “Basis and application of thin film solar cell,” OHMSHA, pp. 175-192 (2001).

Affiliated with

Also associated with

Rating

Electrode material and semiconductor element does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Electrode material and semiconductor element, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electrode material and semiconductor element will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2772256