Electrode material and electrode for III-V group compound semico

Details Electrode material and electrode for III-V group compound semico Electrode material and electrode for III-V group compound semico

1995-02-22

1998-01-13

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257745, H01L 2348

Patent

active

057083010

ABSTRACT:
The invention provides an electrode material having the low contact resistance against a III-V group compound semiconductor, thereby realizing a light emitting device having a high luminance and driven at low voltages. The electrode material of the invention is applied to a III-V group compound semiconductor, which is expressed as a general formula of In.sub.x Ga.sub.y Al.sub.z N, where x+y+z=1, 0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, and 0.ltoreq.z.ltoreq.1, and doped with p-type impurities. The electrode material comprises an alloy of Au and at least one metal selected from the group consisting of Mg and Zn.

REFERENCES:
patent: 5047832 (1991-09-01), Tonai
patent: 5414281 (1995-05-01), Watabe et al.
Amano et al, Jap. J. of Appl. Phys., vol. 28, No. 12, Dec. 1989, "P-Type Conduction in Mg-Doped . . . ," pp. L2112-L2114.
Goldenberg et al, Appl. Phys. Lett. 62 (4), 25 Jan. 1993, "Ultraviolet and Violet light-emitting GaN . . . ," pp. 381-383.
Hacke et al, Appl. Phys. Lett. 63 (19), 8 Nov. 1993, "Schottky barrier on . . . ," pp. 2676-2678.
Nakamura et al, Jap. J. Appl. Phys., vol. 30, No. 12A, Dec. 1991, "High-Power GaN P-N . . . ," pp. L 1998-L 2001.
Foresi et al, Appl. Phys. Lett. 62 (22), 31 May 1993, "Metal contacts to . . . ," pp. 2859-2861.
Khan et al, Appl. Phys. Lett. 58 (21), 27 May 1991, "High electron mobility GaN/Al.sub.x Ga.sub.1-x N . . . ," pp. 2408-2410.

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