Electrode interconnection material, semiconductor device using t

Details Electrode interconnection material, semiconductor device using t Electrode interconnection material, semiconductor device using t

1990-05-09

1991-07-02

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437101, 437187, 437192, 437245, 357 237, H01L 21283

Patent

active

050285513

ABSTRACT:
There is provided a semiconductor device using a molybdenum-tantalum alloy having a tantalum composition ratio of 30 to 84 atomic percent. Using this Mo-Ta alloy, there is provided an electrode interconnection material comprising a multi-layered structure having an underlying metal film having a crystalline form of a body-centered cubic system and overlying a molybdenum-tantalum alloy film having a tantalum composition ratio of above 84 atomic percent. Further using this Mo-Ta alloy, there is provided a display device driving circuit substrate comprising an insulating substrate, a plurality of address lines and data lines intersecting each other on the substrate, the address line being formed of a molybdenum-tantalum alloy having a tantalum composition ratio of 30 to 84 atomic percent, a plurality of thin-film transistors each formed at an intersection of said address and data lines and having its gate electrode connected to an address line and its source electrode connected to data line, and a plurality of display electrodes connected to the drain electrode of the thin-film transistor.

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