Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state
Patent
1994-12-05
1996-09-24
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
117108, 117928, C30B 2506
Patent
active
055587119
ABSTRACT:
An electrode forming method for a surface acoustic wave device is adapted to form a film of an electrode material on a piezoelectric substrate to be crystallographically oriented in a constant direction while carrying out ion assistance at prescribed ion energy, in a film formation process employing a film forming method such as evaporation, sputtering, IBS (ion beam sputtering), CVD (chemical vapor deposition), plasma CVD, MBE (molecular beam epitaxy), ICB (ionized cluster beam) or laser ablation.
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Kunemund Robert
Murata Manufacturing Co. Ltd.
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