Electrode for use in the treatment of an object in a plasma

Details Electrode for use in the treatment of an object in a plasma Electrode for use in the treatment of an object in a plasma

1988-10-25

1991-06-11

Weisstuch, Aaron

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

156345, 156643, 118723, 42218604, 42218605, 20429831, C23F 404

Patent

active

050229796

ABSTRACT:
An electrode for use in the treatment of an object such as a semiconductor wafer through plasma reaction has at least a surface layer formed of silicon carbide. The electrode comprises a base, and the surface layer of silicon carbide is formed on a surface of the base by a CVD coating process.

REFERENCES:
patent: 4318767 (1982-03-01), Hijikata et al.
patent: 4336438 (1982-06-01), Uehara et al.
patent: 4424096 (1984-01-01), Kumagai
patent: 4780169 (1988-10-01), Stark et al.

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