Electrode for thin film capacitor devices

Details Electrode for thin film capacitor devices Electrode for thin film capacitor devices

2007-12-20

2009-06-09

Ha, Nguyen T (Department: 2831)

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

C361S311000, C361S312000, C361S301200, C361S303000, C361S305000

Reexamination Certificate

active

07545625

ABSTRACT:
A method of forming a conductor on a substrate including steps of depositing tantalum on a glass layer of the substrate; oxidizing the tantalum; and depositing a noble metal on the oxidized tantalum to form the conductor. The method can be used to form a ferroelectric capacitor or other thin film ferroelectric device. The device can include a substrate comprising a glass layer; and an electrode connected to the glass layer. The electrode comprising can include a noble metal connected to the glass layer by an adhesion layer comprising Ta2O5.

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Pierson, H. O., Handbook of Chemical Vapor Deposition (CVD): Principles, Technology, and Applications, 1999, Noyes Publications, 2ndEdition, pp. 138-143.

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