Electrode for semiconductor device and method for producing the

Details Electrode for semiconductor device and method for producing the Electrode for semiconductor device and method for producing the

1996-11-21

1997-12-30

Meier, Stephen

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257750, H01L 2348, H01L 2352, H01L 2940

Patent

active

057034036

ABSTRACT:
An electrode for semiconductor devices, which can restrain the occurrence of Al voids and has a high barrier effect, is obtained by inserting a material which has a close resemblance in crystal structure to the barrier layer of a contact part and the aluminum alloy with the crystal surface thereof being oriented mainly at the (111) plane into the interface between the above barrier layer and the aluminum alloy. A semiconductor device according to the present invention comprises a silicon substrate, an interlayer insulating film partially formed on the silicon substrate, a titanium silicide layer formed on the silicon substrate at the part where the interlayer insulating film is not formed, a titanium layer formed on the interlayer insulating film and connected to the titanium silicide layer, a titanium nitride layer formed on the titanium layer and the titanium silicide layer, a Ti--Al--N layer such as Ti.sub.3 AlN and formed on the titanium nitride layer, and an aluminum alloy (Al-1%Si-0.5%Cu) composing an electrode formed on the Ti--Al--N layer.

REFERENCES:
patent: 4141022 (1979-02-01), Sigg et al.
patent: 4989064 (1991-01-01), Kubokoya et al.
patent: 5049975 (1991-09-01), Ajika et al.
Sobue et al: "Metastable Phase Formation in Al alloy/TiN/Ti/Si Systems", First International Symposium on Control of Semiconductor Interfaces, (1993).

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