Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Reexamination Certificate
2005-09-13
2005-09-13
Tran, Minhloan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
C257S013000, C257S747000, C257S748000, C257S749000
Reexamination Certificate
active
06943376
ABSTRACT:
An object of this invention is to provide an electrode for p-type SiC which can provide improved surface morphology and less thermal damage for a semiconductor crystal layer due to formation of an electrode. In this invention, a p-type electrode is manufactured to contain at least one selected from the group consisting of nickel (Ni), cobalt (Co), palladium (Pd) and platinum (Pt).
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Translation of JP 04085972 A, made by the Ralph McElroy Translation Co. on Sep. 15, 2004.
International Search Report dated Dec. 3, 2002 and English Translation of the degree of relevance found.
Korean Office Action, dated Feb. 28, 2005, along with the Japanese translation thereof.
Liu, et al., “Thermally Stable Ohmic Contacts to 6H-and 4H-P-Type SiC”, Jun. 18, 1998, pp. 88-92.
Vassilevski, et al., “Phase formation at rapid thermal annealing of AI/Ti/Ni ohmic contacts on 4H-SiC,” Materials Science and Engineering, vol. 80, No. 1-3, Mar. 22, 2001, pp. 370-373.
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Koide Yasuo
Konishi Ryohei
Murakami Masanori
Nakatsuka Osamu
Shibata Naoki
Dickey Thomas L.
McGinn & Gibb PLLC
Toyoda Gosei Co,., Ltd.
Tran Minhloan
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