Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Patent
1997-10-28
2000-05-09
Bowers, Charles
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
385129, H01L 2100
Patent
active
060603348
ABSTRACT:
When forming electrodes for an optical waveguide element, a metal film is formed on a surface of a substrate, and openings of predetermined shapes are formed in the metal film. Then proton exchange is carried out on the surface of the substrate with the metal film used as a mask, and optical channel waveguides are thus formed. At least a part of edge portions of the metal film defining the openings is left on the substrate and the metal film is plated with plating metal. The metal film plated with the plating metal is processed into electrodes of predetermined shapes for applying an electric voltage to the optical channel waveguides.
REFERENCES:
patent: 3616282 (1971-10-01), Bodway
patent: 5032220 (1991-07-01), Yamamoto et al.
patent: 5121237 (1992-06-01), Ikeda et al.
patent: 5617493 (1997-04-01), Nishimoto
patent: 5834055 (1998-11-01), Mahapatra et al.
Bowers Charles
Brewster William M.
Fuji Photo Film Co. , Ltd.
LandOfFree
Electrode for optical waveguide element and method of forming th does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Electrode for optical waveguide element and method of forming th, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electrode for optical waveguide element and method of forming th will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1064181