Semiconductor device manufacturing: process – Having metal oxide or copper sulfide compound semiconductor...
Reexamination Certificate
2005-09-20
2005-09-20
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Having metal oxide or copper sulfide compound semiconductor...
C438S099000
Reexamination Certificate
active
06946319
ABSTRACT:
An embodiment of the present invention pertains to an electrode that includes a metal oxide layer, and a conductive layer on that metal oxide layer. The metal oxide layer is an alkali metal oxide or an alkaline earth metal oxide that is formed by: (1) decomposing a compound that includes (a) oxygen and (b) an alkali metal or an alkaline earth metal, or (2) thermally reacting at least two compounds where one of the at least two compounds includes the alkali metal or the alkaline earth metal, and another one of the at least two compounds includes oxygen. The metal oxide layer can also be formed by thermally reacting at least two compounds where one of those compounds includes (a) oxygen and (b) an alkali metal or an alkaline earth metal.
REFERENCES:
patent: 5677572 (1997-10-01), Hung et al.
patent: 5703436 (1997-12-01), Forrest et al.
patent: 5776623 (1998-07-01), Hung et al.
patent: 6404126 (2002-06-01), Arai et al.
patent: 6430810 (2002-08-01), Bailey
patent: 6432741 (2002-08-01), Mueller et al.
patent: 6563262 (2003-05-01), Cao
Allemand Pierre-Marc
Stegamat Reza
George Thomas
Nhu David
Osram Opto Semiconductors GmbH
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