Electrode arrangement for optoelectronic devices

Details Electrode arrangement for optoelectronic devices Electrode arrangement for optoelectronic devices

1988-03-29

1989-07-25

Sikes, William L.

350 9613, G02B 610

Patent

active

048506672

ABSTRACT:
The invention relates to an electrode arrangement for optoelectronic devices. A wafer (11) of electro-optical material has on its upper surface a first elongate electrode (12) and a second U-shaped electrode (13). The electrodes (12, 13) are mutually spaced (d.sub.1) apart in an interaction region (L.sub.1) with light wave guides (14). The first electrode (22) has a connecting conductor (15) for an incoming microwave signal (S.sub.1) with the aid of which a light wave (P) is to be modulated. The connecting conductor (15) divides the first electrode (12) into a standing wave guide (17) and a travelling wave guide (18), which is connected via resistor (R.sub.1) to the second electrode (13). The incoming microwave signal (S.sub.1) is divided up in the reflection point (16) into a standing wave (S.sub.2) and a travelling wave (S.sub.3), which co-act in the modulation of the light wave (P). The electrode arrangement results in a modulator of bandpass character, which requires relatively low voltage in the incoming microwave signal (S.sub.1). The modulator center frequency can be selected by selecting the length (L.sub.1) of the standing wave guide (17).

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Richard A. Becker, "Multigigahertz Lumped-Element Electrooptic Modulators", IEEE Journal of Quantum Electronics, vol. QE-21, No. 8, Aug. 1985.
R. A. Becker et al., "Wide-Bandwidth . . . at .lambda.=3.39, .mu.m", Appl. Phys. Lett. 46(a) (May 1, 1985).
R. A. Becker, "Broad-Band . . . Modulators", IEEE Journal of Quantum Electronics, vol. QE-20, No. 7 (Jul. 1984).

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