Electrode and semiconductor device provided with the electrode

Details Electrode and semiconductor device provided with the electrode Electrode and semiconductor device provided with the electrode

1984-07-03

1985-06-04

Edlow, Martin H.

357 67, 357 65, 357 59, 357 15, 357 63, H01L 4500

Patent

active

045217947

ABSTRACT:
A semiconductor layer is formed on at least one portion of a silicon substrate. The layer is made of poly-crystalline or amorphous multicomponent containing silicon, at least one element of Group IV having an atomic radius larger than that of silicon, such as germanium or tin, and donor impurity or acceptor impurity.

REFERENCES:
patent: 3496027 (1970-02-01), Dingwall et al.
patent: 3510364 (1970-05-01), Oesterhelt et al.
patent: 4301323 (1981-11-01), Schink
patent: 4342044 (1982-07-01), Ovshinsky et al.
Friederich et al., "Doping Effect in CVD Deposited Amorphous Silicon: A Study by Light-Induced ESR", Proc. 15th Int. Conf. Physics of Semiconductors, Kyoto (1980); J. Phys. Soc. Japan, vol. 49, (1980), Suppl. A, pp. 1233-1236.
Hall et al., "Preparation and Properties of Boron-Doped Silicon Films Grown at Low Temperature by Chemical Vapor Deposition" Thin Solid Films, vol. 18, pp. 145-155, (1978).
Spear et al., "Electronic Properties of Substitutionally Doped Amorphous Si and Ge", Philosophical Mag., vol. 33, No. 6, (1976), pp. 935-949.

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