Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2006-01-31
2010-12-28
Fahmy, Wael M (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S252000, C257S254000, C257S257000, C257S258000, C257SE23016, C257SE29147, C257SE29117, C257SE27125, C257SE27100, C257SE27132
Reexamination Certificate
active
07858983
ABSTRACT:
An electrochromic display is disclosed which comprises an array-side substrate (10) wherein a TFT (14) and a pixel electrode (15) connected with the TFT (14) are formed, a color filter-side substrate (50) wherein a counter electrode (53) is formed, and an electrolyte layer (80) injected between the array-side substrate (10) and the color filter-side substrate (50). In this electrochromic display, the TFT (14) is formed to have an area not less than 30% of the area of the pixel, thereby supplying a larger current. Consequently, oxidation-reduction reaction in the electrochromic phenomenon proceeds at a higher rate, thereby enabling a high-speed response.
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Morita Satoshi
Sano Yutaka
Yamauchi Takao
Armand Marc
Fahmy Wael M
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