Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2006-05-30
2006-05-30
Clark, S. V. (Department: 2823)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S959000
Reexamination Certificate
active
07052996
ABSTRACT:
An electropolish process may remove a conductive film from a semiconductor wafer. An electropolish apparatus having a pad over a platen may make surface-to-surface electrical contact with the conductive film of the wafer across the entire surface of the pad and the conductive film on the wafer. An electric field may be applied through openings in the pad and electrodes which receive potential by feedthroughs that extend through the platen to those electrodes. The electrodes in the feedthroughs may be electrically isolated from the pad and the platen. As a result, more uniform application of electrical potential across the surface to be polished may be achieved in some embodiments.
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Clark S. V.
Intel Corporation
Trop Pruner & Hu P.C.
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