Electrochemically etched multilayer semiconductor structures

Details Electrochemically etched multilayer semiconductor structures Electrochemically etched multilayer semiconductor structures

1988-10-21

1996-11-19

Nelson, Peter A.

Fishing, trapping, and vermin destroying

1566471, 136201, H01L 21465, C03C 2506

Patent

active

055762492

ABSTRACT:
An electrochemical method is disclosed for selectively etching either n-type or p-type semiconductor material in the presence of the other type. A liquid electrolyte is prepared in which the etching reaction is based on hole transport. In selectively etching p-type material the holes are provided by the dopant concentration and the process is carried out in the dark to prevent the etching of n-type layers. Conversely, selective etching of n-type material is done in the presence of light and with p-type material effectively out of the current path. In a preferred embodiment of a method of selectively etching a doping superlattice n-i-p-i structure composed of alternating p-type and n-type GaAs layers, C.sub.6 H.sub.2 (OH).sub.2 (SO.sub.3 Na).sub.2 .cndot.H.sub.2 O is used as the electrolyte. Selectively etching first the p-type layers at one end of the structure and then the n-type layers at the other end, digitate edge patterns are etched to which ohmic contacts can be applied. The invention also encompasses selectively etched structures which can be used to fabricate various kinds of electro-optic devices, such as optical modulators and photodetectors.

REFERENCES:
patent: 3689389 (1972-09-01), Waggener
patent: 4465894 (1984-08-01), Reyes
patent: 4795498 (1989-01-01), Germanton et al.
G. H. Dohler et al., In Situ Grown-In Selective Contact to N-i-p-i Doping, App. Phys. Letters, vol. 49, pp. 704-706, Sep. 1986.
Horikoshi et al, A New Doping Superlattice Photodetector, Appl. Phys. Ab., vol. 37, pp. 47-56, 1985.
Faktor et al., The Characterization of Semiconductor Materials & Structures Using Electrochemical Techniques, North-Holland Publishing Co., 1980.

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