Electrochemical thinning of silicon

Chemistry: electrical and wave energy – Processes and products – Electrostatic field or electrical discharge

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

20412955, 20412965, C25F 312, C25F 314

Patent

active

052777693

ABSTRACT:
Porous semiconducting material, e.g. silicon, is formed by electrochemical treatment of a specimen in hydrofluoric acid, using the specimen as anode. Before the treatment, the specimen can be masked. The porous material is then etched with a caustic solution or is oxidized, depending of the kind of structure desired, e.g. a thinned specimen, a specimen, a patterned thinned specimen, a specimen with insulated electrical conduits, and so on. Thinned silicon specimen can be subjected to tests, such as measurement of interstitial oxygen by Fourier transform infra-red spectroscopy (FTIR).

REFERENCES:
patent: 3954523 (1976-05-01), Magdo et al.
patent: 3962052 (1976-06-01), Abbas et al.
patent: 4006045 (1977-02-01), Aboaf et al.
patent: 4104090 (1978-08-01), Pogge
patent: 4180439 (1979-12-01), Deines et al.
patent: 4303482 (1981-12-01), Buhne et al.
patent: 4415414 (1983-11-01), Burton et al.
patent: 4419813 (1983-12-01), Iwai
patent: 4510016 (1985-04-01), Chi et al.
patent: 4626322 (1986-12-01), Switzer
patent: 4798808 (1989-01-01), Berman
patent: 4874484 (1989-10-01), Foell et al.
patent: 5139624 (1992-08-01), Searson et al.
H. Huannan et al., "Determination of Micro Amounts of Oxygen in Silicon By nert-Gas Fusion". Talanta, vol. 30, No. 10, pp. 761-765, 1983.
W. Gladden et al., "Free Carrier Absorption and Interstitial Oxygen Measurements", National Bureau of Standards, pp. 353-364.
H. Tsuya et al., "Infrared Optical Measurement of Interstitial Oxygen Content In Heavily Doped Silicon Crystals", Semiconductor Silicon, 1986, pp. 517-525.
M. Goldstein et al., "The Calibration and Reproducibility of Oxygen Concentration In Silicon Measurements Using Sims Characterization Technique", Semiconductor Fabrication: Technology and Metrology ASTM, STP, 990, 1988, pp. 1-11.
P. Chu et al., "Direct Comparison of FTIR and SIMS Calibration For [O] in Silicon", Materials Research Society Symposia Proceedings, vol. 59, 1986, Materials Research Society, pp. 65-71.
R. Bleiler et al., "SIMS Measurement of Oxygen In Heavily-Doped Silicon", Material Research Society Symposium Proc., vol. 59, 1986, Materials Research Society, pp. 73-79.
Oates et al., "Infrared Measurements of Interstitial Oxygen In Heavily Doped Silicon", Journal of Crystal Growth, 89, 1988, pp. 117-123.
A. Baghdadi et al., "Interlaboratory Determination of the Calibration Factor For The Measurement of the Interstitial Oxygen Content of Silicon By Infrared Absorption", Journal Electrochemical Society, vol. 136, No. 7, Jul. 1989, pp. 2015-2024.
F. Schomann et al., "Correction Factors for the Determination of Oxygen in Silicon by IR Spectrometry", Journal Electrochemical Society, vol. 136, No. 7, Jul. 1989, pp. 2025-2031.
S. Bains et al., "Oxygen Precipitation in Heavily Doped Silicon", Journal Electrochemical Society, vol. 137, No. 2, Feb. 1990, pp. 647-652.
T. Guilinger et al., "Porosity Determinations in Buried and Surface Layers of Porous Silicon", Sandia National Laboratories, Albuquerque, NM.
J. Medernach et al., "The Application of Selective Electrochemical Wafer Thinning for Silicon Characterization", Defects in Silicon II Symposium, Spring ECS Meeting, 1991.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Electrochemical thinning of silicon does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Electrochemical thinning of silicon, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electrochemical thinning of silicon will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1628755

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.