Electrochemical oxidation of amorphous silicon

Details Electrochemical oxidation of amorphous silicon Electrochemical oxidation of amorphous silicon

1980-05-15

1981-09-15

Weisstuch, Aaron

Chemistry: electrical and wave energy

Processes and products

204385, 204 56R, 136255, 136258, 357 2, 357 15, 357 30, C25D 500, H01L 3104

Patent

active

042896029

ABSTRACT:
The invention teaches an electrochemical process for electrolysis growth of an oxide layer on hydrogenated amorphous silicon. Embodied in a photovoltaic device, the oxide layer increases the open circuit voltage of the device and enhances the longevity of the photovoltaic characteristics of the device.

REFERENCES:
patent: 3377258 (1968-04-01), Schmidt et al.
patent: 4117506 (1978-09-01), Carlson
R. J. Stirn et al., "Single Crystal & Polycrystalline GaAs Solar Cells Using AMOS Technology", Conf. Record, 12th IEEE Photovoltaic Specialists Conf., 1976, pp. 883-892.

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