Electrochemical method for producing a passivated junction in al

Chemistry: electrical and wave energy – Processes and products

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C25D 1132

Patent

active

044540086

ABSTRACT:
A ternary or more complex semiconductor alloy is treated to form simultansly a junction beneath its surface and to passivate the same surface. The treatment consists of connecting the semiconductor to one electrode of an electrolytic circuit, immersing it in an electrolyte which may contain a leachant, and energizing between electrolytic circuit electrodes with a substantially square electric current wave with a direct current average value. After a predetermined time, the semiconductor is removed from the electrolyte, is disconnected from the electrolyte, and is washed, rinsed, and dried. During the process the electric current causes ions of the semiconductor to migrate toward its surface, where they enter the electrolyte. This depletion of ions effectively forms a junction; the current also causes oxidation of the semiconductor surface for passivation.

REFERENCES:
patent: 3568305 (1971-03-01), Janning
patent: 3627647 (1971-12-01), Reuter
patent: 3634204 (1972-01-01), Ohaka

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