Electrochemical formation of field emitters

Details Electrochemical formation of field emitters Electrochemical formation of field emitters

1997-05-01

1999-03-16

Phasge, Arun S.

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058825037

ABSTRACT:
Electrochemical formation of field emitters, particularly useful in the fabrication of flat panel displays. The fabrication involves field emitting points in a gated field emitter structure. Metal field emitters are formed by electroplating and the shape of the formed emitter is controlled by the potential imposed on the gate as well as on a separate counter electrode. This allows sharp emitters to be formed in a more inexpensive and manufacturable process than vacuum deposition processes used at present. The fabrication process involves etching of the gate metal and the dielectric layer down to the resistor layer, and then electroplating the etched area and forming an electroplated emitter point in the etched area.

REFERENCES:
patent: 5462467 (1995-10-01), Macaulay et al.
patent: 5559389 (1996-09-01), Spindt et al.
patent: 5578185 (1996-11-01), Bergeron et al.
Busta H. Heinz, "Vacuum Microelectronics-1992 Review"; Journal of Micromechanical Microeng; vol. 2; pp. 43-74, Jun. 1992.
J.K. Cochran et al, "Low voltage field emission from tungsten fiber arrays in a stabilized zirconia matrix"; Journal of Material Research; vol. 2 No. 3; pp. 322-325, Mar. 1987.

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