Electrochemical etching of a mercury-cadmium-telluride substrate

Details Electrochemical etching of a mercury-cadmium-telluride substrate Electrochemical etching of a mercury-cadmium-telluride substrate

1983-04-04

1986-01-14

Tufariello, Thomas

Chemistry: electrical and wave energy

Processes and products

20412935, 2041297, 20412985, C25D 1132, C25F 312, C25F 330

Patent

active

045644250

ABSTRACT:
In this disclosure there is described a novel method for using electrochemical etching to finely polish the surface of a (Hg,Cd)Te substrate resulting in a defect-free infrared detector with enhanced electronic properties. The fine surface polishing is obtained by etching at optimal levels of current density and electrolyte agitation.

REFERENCES:
patent: 2861932 (1958-11-01), Pohl
patent: 2904479 (1959-09-01), McCord et al.
patent: 3898141 (1975-08-01), Ermanis et al.
patent: 3977018 (1976-08-01), Catagnus et al.
patent: 4441967 (1984-04-01), Pohlmann et al.
Manly et al, Semiconductor Surfaces, Wiley and Sons, Inc, New York, 1965, pp. 117-122.
Nemirovsky et al, "Anodic Oxide Films on Hg.sub.1-x Cd.sub.x Te", J. Electrochem Soc, May, 1979, pp. 768-770.
Thrush, "A Method for Selective Substrate Removal from Thin P-Type Gallium Arsenide Layers", Journal of Physics E., vol. 7, No. 6, pp. 493-495, Jun. 1974.

Affiliated with

Also associated with

Rating

Electrochemical etching of a mercury-cadmium-telluride substrate does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Electrochemical etching of a mercury-cadmium-telluride substrate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electrochemical etching of a mercury-cadmium-telluride substrate will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-429505