Electrochemical etching method

Details Electrochemical etching method Electrochemical etching method

1991-08-05

1992-12-01

Valentine, Donald R.

Chemistry: electrical and wave energy

Processes and products

Electrostatic field or electrical discharge

C25F 312

Patent

active

051677784

ABSTRACT:
An electrochemical etching method for producing semiconductor diaphragms from a semiconductor wafer comprised of a first semiconductor layer of a first conductivity type and a second semiconductor layer formed on the first semiconductor layer, the second semiconductor layer having a second conductivity type different than the first semiconductor layer. The semiconductor wafer is placed in an etching solution with respect to a counter-electrode immersed in the etching solution. The semiconductor wafer has a plurality of chips each of which includes at least one third semiconductor layer of the first conductivity type. The third semiconductor layer extends through the second semiconductor layer to the first semiconductor layer. A first positive potential is applied to the first and third semiconductor layers with respect to the counter-electrode. A second positive potential is applied to the second semiconductor layer with respect to the first semiconductor layer.

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patent: 4966663 (1990-10-01), Mauger
patent: 4996627 (1991-02-01), Zias et al.
Jackson et al., "An Electrochemical P-N Junction Etch-Stop for the Formation of Silicon Microstructures", IEEE Electron Device Letters, vol. EDL-2, Feb. 1981, pp. 44-45.
Gealer et al., "The Effect of an Interfacial P-N Junction on the Electrochemical Passivation of Silicon in Aqueous Ethylenediamine-Pyrocatechol"Journal of the Electrochemcial Society, May 1988, pp. 1180-1183.
Kloeck et al., "Study of Electrochemical Etch-Stop for High-Precision Thickness Control of Silicon Membranes", IEEE Transactions on Electron Devices, vol. 36, No. 4, Apr. 1989, pp. 663-669.

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