Electrochemical etch-stop on n-type silicon by injecting holes f

Details Electrochemical etch-stop on n-type silicon by injecting holes f Electrochemical etch-stop on n-type silicon by injecting holes f

1994-01-24

1995-08-29

Niebling, John

Chemistry: electrical and wave energy

Processes and products

Electrostatic field or electrical discharge

20412943, 20412965, 20412975, 437 62, 437947, C25F 312

Patent

active

054457181

ABSTRACT:
The invention generally includes a method of selectively etching a body of silicon material wherein a silicon wafer is used as a working electrode and having an n-type region and a relatively shallow p-type layer. The working electrode and a counterelectrode are placed in a liquid etchant. High voltage pulses, greater than 2 V are applied between the working electrode and the counterelectrode so that holes from the p-type layer are injected into the n-type region and etching is stopped due to oxidation of the n-type region. The technique is useful in producing very thin n-type membranes.

REFERENCES:
patent: 5071510 (1991-12-01), Findler et al.
patent: 5129982 (1992-07-01), Wang et al.
patent: 5285083 (1994-02-01), Pulfrey et al.

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