Metal working – Barrier layer or semiconductor device making – Barrier layer device making
Reexamination Certificate
2005-10-18
2005-10-18
Nguyen, Ha Tran (Department: 2812)
Metal working
Barrier layer or semiconductor device making
Barrier layer device making
C423S447100, C423S448000
Reexamination Certificate
active
06955694
ABSTRACT:
A method of making an electrode structure, and a double layer capacitor including the electrode structure, the method includes the steps of: applying a first slurry including conducting carbon powder and a binder to a current collector plate; curing the applied first slurry to form a primary coating; applying a second slurry that includes activated carbon powder, a solvent and a binder to the primary coating; and curing the applied second slurry to form a secondary coating, thereby forming a first electrode. In variations, additional primary and secondary coatings may be formed on both sides of the collector plate.
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Bendale Priya
Chaney Earl
Dispennette John M.
Malay Manuel R.
Nanjundiah Chenniah
Foley & Lardner LLP
Maxwell Technologies, Inc.
Nguyen Ha Tran
LandOfFree
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