Electrochemical dielectric isolation technique

Details Electrochemical dielectric isolation technique Electrochemical dielectric isolation technique

1984-12-04

1985-11-19

Valentine, Donald R.

Chemistry: electrical and wave energy

Processes and products

Electrostatic field or electrical discharge

2041296, C25F 312

Patent

active

045540594

ABSTRACT:
Plane indicating moats are formed extending through an epitaxial layer into a substrate simultaneous with the formation of the isolation moats which terminate within the epitaxial layer. The substrate is ground to a predetermined thickness after formation of the dielectric isolation and support structure. The composite structure is inserted in an etchant with conditions set to electrochemically etch only the substrate. The exposed plane indicating moats are used as a reference for a final polishing step.

REFERENCES:
patent: 3536600 (1970-10-01), Van Dijk et al.
patent: 3575740 (1971-04-01), Castrucci et al.
patent: 3640807 (1972-02-01), Van Dijk
patent: 3642593 (1972-02-01), Meek
patent: 3661741 (1972-05-01), Meek
patent: 3721588 (1973-03-01), Hays
patent: 3776788 (1973-12-01), Henker
patent: 3902979 (1975-09-01), Thomas
patent: 4050979 (1977-09-01), Smeltzer et al.
patent: 4056415 (1977-11-01), Cook, Jr. et al.
patent: 4166782 (1979-09-01), Collins et al.
patent: 4380865 (1983-04-01), Frye et al.

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