Electroabsorption optical intesity modulator having a plurality

Details Electroabsorption optical intesity modulator having a plurality Electroabsorption optical intesity modulator having a plurality

1997-09-18

1999-12-07

Bacares, Rafael

Optical: systems and elements

Deflection using a moving element

Using a periodically moving element

359181, 359248, 385131, 385 5, H04B 1004

Patent

active

059992980

ABSTRACT:
In an electroabsorption optical intensity modulator, a semiconductor buffer, a first semiconductor cladding layer, a semiconductor optical absorption layer, a second semiconductor cladding layer and a semiconductor cap layer are formed on a semiconductor substrate. Also, a first electrode is formed on the second semiconductor cap layer, and a second electrode is formed on a second surface of the semiconductor substrate. The semiconductor optical absorption layer includes a first semiconductor optical absorption layer element having a first absorption edge wavelength and a second semiconductor optical absorption layer element having a second absorption edge wavelength different from the first absorption edge wavelength.

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Japanese Office Action dated Jun. 16, 1998 with English Language translation of Japanese Examiner's comments.
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