Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2004-05-19
2008-09-16
Loke, Steven (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C372S050121, C372S092000, C372S098000, C372S099000
Reexamination Certificate
active
07425726
ABSTRACT:
Electro-absorption modulators and methods of making the same are described. In one aspect, an electroabsorption modulator includes first and second electrodes, first and second cladding regions, an active region, and a tunnel junction structure. The first and second cladding regions are between the first and second electrodes. The active region is between the first and second cladding regions and includes a light absorption region. The tunnel junction structure is between the active region and one of the first and second cladding regions.
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Office Action from corresponding application No. EP 04 028 039.8.
Avago Technologies Fiber IP Pte Ltd.
Loke Steven
Nguyen Tram H
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